Low Cost Imaging in the MM Wave Region Using Plasma Waves in High Mobility Transistor

Technical Abstract

We propose to develop low-cost, high sensitivity high electron mobility transistor-based W-band millimeter wave focal plane array/camera based on mature ternary III-V epitaxial materials of InGaAs/InAlAs on top of InP substrate. The plasma-wave detector uses well established mature technology of high electron mobility transistors which allows future integration and reduces cost. The detectors are uncooled since no drain-source voltage is applied, hence there is no dark current present, promoting low power operation.

Anticipated Benefits/Potential Commercial Applications of the Research or Development

Passive millimeter wave cameras are particularly useful to the military for the detection of threats, including person-borne improvised explosive devices. More broadly, private sector applications, security applications, narcotics detections, facility access control and screening, can all benefit from the successful development of the proposed research and product. The imaging system can be readily deployed for security industries in various scenarios such as event venue, prison, government installations, marine time navigation.

Key words:

Millimeter Wave Imaging, High Electron Mobility Transistors, Person Borne Improvised Explosive Device Detection, W-band Detector, W-band Imaging, Chemical/Bio Defense Millimeter Wave Imaging, High Electron Mobility